Solid-state imaging apparatus

ABSTRACT

An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. 
     The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.

BACKGROUND OF THE INVENTION

Field of the Invention

The present invention relates to a solid-state imaging apparatus.

Description of the Related Art

A configuration has been proposed which electronically controls exposurestarts and exposure ends of all of a plurality of pixels each having aphotoelectric conversion portion are arranged in row and columndirections in a CMOS image sensor (global electronic shutter).

As a configuration for implementing such a global electronic shutterfunction, Japanese Patent Laid-Open No. 2008-103647 discloses anembodiment having an electric-carrier accumulation portion separatelyfrom a photoelectric conversion portion and floating diffusion withineach of the pixels. With the configuration, electric carriers aretransferred from the photoelectric conversion portion to theelectric-carrier accumulation portion, and electric carriers aretransferred from the electric-carrier accumulation portion to thefloating diffusion.

SUMMARY OF THE INVENTION

In the configuration disclosed in Japanese Patent Laid-Open No.2008-103647, when the difference in potential is small between thephotoelectric conversion portion and the electric-carrier accumulationportion, there is a possibility that partial electrons present under agate of a transfer transistor of electric carriers to be transferredfrom the photoelectric conversion portion to the electric-carrieraccumulation portion may return to the photoelectric conversion portionwithout being transferred to the electric-carrier accumulation portion.This reduces the efficiency of the electric carriers transfer from thephotoelectric conversion portion to the electric-carrier accumulationportion.

Accordingly, the present invention provides an inventive solid-stateimaging apparatus which can improve the efficiency of transfer ofelectric carriers from the photoelectric conversion portion to theelectric-carrier accumulation portion.

There is provided a solid-state imaging apparatus according to thepresent invention in which a plurality of pixels are laid out in amatrix form, each of the pixels having an imaging region having aphotoelectric conversion portion, a first transfer transistor configuredto transfer electric carriers from the photoelectric conversion portion,an electric-carrier accumulation portion to which the electric carriersare transferred from the first transfer transistor, a second transfertransistor configured to transfer electric carriers accumulated in theelectric-carrier accumulation portion, and a floating diffusion to whichthe electric carriers are transferred from the second transfertransistor, the solid-state imaging apparatus including an active regionhaving the photoelectric conversion portion, the electric-carrieraccumulation portion, and the floating diffusion, and an elementisolation region having an insulator defining the active region, and inplaner view, the width of the active region in the electric-carrieraccumulation portion under a gate of the first transfer transistor islarger than the width of the active region in the photoelectricconversion portion under the gate of the first transfer transistor.

Further features of the present invention will become apparent from thefollowing description of exemplary embodiments (with reference to theattached drawings).

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C illustrate a pixel plan view and cross-section viewsaccording to a first exemplary embodiment.

FIGS. 2A to 2D are potential cross-section views according to the firstexemplary embodiment.

FIG. 3 is a cross-section view according to the first exemplaryembodiment.

FIGS. 4A to 4C illustrate a pixel plan view and cross-section viewsaccording to a second exemplary embodiment.

FIG. 5 is a cross-section view according to the second exemplaryembodiment.

FIG. 6 is a pixel plan view according to third exemplary embodiment.

FIGS. 7A to 7C illustrate a pixel plan view and a cross-section viewaccording to a fourth exemplary embodiment.

FIG. 8 is a pixel plan view according to the fourth exemplaryembodiment.

FIGS. 9A to 9D illustrate potential cross-section views according to thefourth exemplary embodiment.

FIGS. 10A to 10C illustrate a pixel plan view and cross-section viewsaccording to a fifth exemplary embodiment.

FIGS. 11A to 11C illustrate a pixel structure and potentialscorresponding to the pixel structure.

DESCRIPTION OF THE EMBODIMENTS

First Exemplary Embodiment

A first exemplary embodiment according to the present invention will bedescribed with reference to FIGS. 1A to 1C to FIG. 3. It should be notedthat positive holes may be used as signal electric carriers thoughelectrons are used as signal electric carriers below. When electrons areused as signal electric carriers, a first conductivity type is ann-type, and a second conductivity type is a p-type. When holes are usedas signal electric carriers, the conductivity types of the semiconductorregions have the opposite conductivity types of those of the case wheresignal electric carriers are electrons.

In the following description of exemplary embodiments, the term“semiconductor substrate surface” refers to a principal surface of asemiconductor substrate having semiconductor regions configuring pixels.The term “semiconductor substrate” is a concept including not only amaterial substrate but also a member having a plurality of semiconductorregions. The terms “top” or “upper” refers to the direction close to theprincipal surface of the semiconductor substrate, and the term “bottom”or “lower” refers to the direction close to the back surface away fromthe principal surface of the semiconductor substrate, by which therelative positional relationship between predetermined regions andmembers may be identified.

FIG. 1A is a diagram (plan view) illustrating, in planer view, one of aplurality of pixels arranged in a matrix form in an imaging region of asolid-state imaging apparatus. FIG. 1B and FIG. 1C are cross-sectionviews taken at lines IB-IB and IC-IC, respectively. FIGS. 2A to 2C arepotential cross-section views taken at line II-II in FIG. 1A, and FIG. 3is a cross-section view taken at line III-III in FIG. 1A.

Referring to FIG. 1A, a pixel P1 includes a photoelectric conversionportion 2, a first transfer transistor (including a gate 8) configuredto transfer electric carriers from the photoelectric conversion portion2, and an electric-carrier accumulation portion 4 configured toaccumulate electric carriers transferred from the first transfertransistor. The pixel P1 further includes a second transfer transistor(including a gate 9) configured to transfer electric carriers from theelectric-carrier accumulation portion 4, and, a floating diffusion(hereinafter, also called an “FD”) 6 configured to accumulate electriccarriers transferred from the second transfer transistor. The pixel P1further include an overflow drain 7 (hereinafter, also called an “OFD”)usable for outputting electric carriers from the photoelectricconversion portion 2, and an overflow transistor (including a gate 10)configured to transfer electric carriers to the OFD). The pixel P1further includes a reset transistor (including a gate 11) connected tothe FD 6, and a source follower transistor (including a gate 12) towhich the FD 6 and the gate 12 are connected via a metallic wire. Inaddition, the pixel 1 further includes a row selecting transistor 13,and a signal output unit 14.

The active region 1 having the photoelectric conversion portion 2,electric-carrier accumulation portion 4, FD 6 and so on defines itsrange by an element isolation region 17 made of an insulator. Theelement isolation region 17 may be configured by an STI (Shallow trenchisolation) or a LOCOS (Local oxidation of silicon), for example.

A p-type region 15 is provided in the element isolation region 17 of theactive region 1. The active region 1 in the electric-carrieraccumulation portion has a width larger than the width of the activeregion 1 in the photoelectric conversion portion under the gate 8 of thefirst transfer transistor.

Next, the cross-section view in FIG. 3 taken at line III-III in FIG. 1will be described. According to this exemplary embodiment, thephotoelectric conversion portion 2, electric-carrier accumulationportion 4, FD 6, and OFD 7 are provided inside of a p-type well 22. Thep-type well 22 is formed on one principal surface of an n-type substrate21 by ion implantation or epitaxial growth. A p-type substrate may beused instead of the n-type substrate 21 having the p-type well 22thereon.

The gate 8 of the first transfer transistor configured to transferelectric carriers from the photoelectric conversion portion 2 to theelectric-carrier accumulation portion 4, and the gate 9 of the secondtransfer transistor configured to transfer electric carriers from theelectric-carrier accumulation portion 4 to the FD 6 are provided on thesemiconductor substrate surface. The gate 10 of the overflow transistorconfigured to transfer electric carriers from the photoelectricconversion portion 2 to the OFD 7 is provided on the semiconductorsubstrate surface.

According to this exemplary embodiment, the photoelectric conversionportion 2 includes an n-type region 3, an n-type region 30, a p-typewell 22, and a p-type region 24.

The n-type region 3 is provided in an inner part of the n-type region30, and the n-type region 3 has a lower surface in contact with then-type region 30. The n-type region 3 has an impurity concentrationhigher than the impurity concentration of the n-type region 30. Then-type region 30 forms a pn junction together with the p-type well 22placed under the n-type region 30. The p-type region 24 is provided onthe semiconductor substrate surface of the n-type region 3, and theupper surface of the n-type region 3 is in contact with the p-typeregion 24. The p-type region 24 on the n-type region 3 forms a pnjunction. Thus, a so-called embedded type photodiode is provided, whichreduces dark current caused by an interface structure against anoxidation film (not illustrated) formed on the substrate surface.

According to this exemplary embodiment, the electric-carrieraccumulation portion 4 includes an n-type region 5, a p-type region 25,and a p-type region 26.

The p-type region 25 is provided on the n-type region 5. The p-typeregion 26 having an impurity concentration higher than that of thep-type well 22 is provided under the n-type region 5. The p-type region26 forms a pn junction together with the n-type region 5. When electriccarriers are transferred from the electric-carrier accumulation portion4 to the FD 6, a reverse bias is applied to the n-type region 5, and then-type region 5 is depleted. When the n-type region 5 is depleted, thedepletion layer spreads also to the p-type region 26. The amount ofspread of the depletion layer depends on the impurity concentration ofthe p-type region 26. Because the impurity concentration of the p-typeregion 26 is higher than the impurity concentration of the p-type well22, the spread of the depletion layer to the p-type region may besuppressed, compared to the case where only the p-type well 22 isprovided, which can reduce the voltage for depleting.

A shielding member 20 is provided on the electric-carrier accumulationportion 4, the gate 8 of the first transfer transistor, and the gate 9of the second transfer transistor.

A channel region 40 is provided at the bottom of the gate 8 of the firsttransfer transistor and serves to transfer electric carrier from thephotoelectric conversion portion 2 to the electric-carrier accumulationportion 4 in a conductive state. The p-type region 15 functioning as achannel stop is provided under the element isolation region 17. Thep-type region 15 is formed by a different process from that for thep-type well 22. A plug 27 is connected to the FD 6 and the OFD 7.

FIG. 1B is a cross-section view taken at line IB-IB in FIG. 1A andillustrating a plane having the n-type region 3 (viewed in the directionindicated by the arrow).

Referring to FIG. 1B, the n-type region 3 (first semiconductor region)having an impurity concentration higher than that of the n-type region30 is provided on the n-type region 30. The p-type region 15 (thirdsemiconductor region) extends in the element isolation region of theactive region 1 along the boundary between the active region 1 and theelement isolation region 17. The gate 8 of the first transfer transistoris provided thereon through a gate oxidation film (not illustrated). Thep-type region 24 may exist under the gate 8, but it is omitted infigures.

FIG. 1C is a cross-section view taken at line IC-IC in FIG. 1A andillustrating a plane having the n-type region 5 (viewed in the directionindicated by the arrow).

Referring to FIG. 1C, the n-type region 5 (second semiconductor region)is provided on the p-type region 26. Like FIG. 1B, the p-type region 15(third semiconductor region) is provided closer to the element isolationregion 17 of the active region 1.

Comparing FIG. 1B and FIG. 1C, in a direction 300, the width of then-type region 3 is smaller than the width of the n-type region 5. Ingeneral, for identifying the size of a channel region in a MOStransistor, the length in the direction of electric carrier transfer iscalled a channel length, and the length in the direction orthogonal tothe direction of electric carrier transfer is called a channel width.According to this exemplary embodiment, the direction 300 illustrated inFIGS. 1B and 1C corresponds to the direction of the channel width of thechannel region in the first transfer transistor. Accordingly, thedirection will be called a channel width direction of the transfertransistor below, and FIGS. 1B and 1C are cross-section views in thechannel width direction of the first transfer transistor.

Next, effects of the difference in width between the n-type region 3 andthe n-type region 5 in the channel width direction 300 of the firsttransfer transistor will be described.

First of all, with reference to FIGS. 11A to 11C, potentials in then-type region at a source or a drain of the n-type MOS transistor willbe described.

FIGS. 11A(A-1) to 11C(C-1) are cross-section views in the channel widthdirection of the n-type MOS transistor illustrating the source or drainof the n-type MOS transistor viewed from the direction from the channelregion to the source or from the channel region to the drain.

FIGS. 11A(A-1) to 11C(C-1) illustrate an n-type region 1000, a p-typeregion 1100, and a channel width direction 1200. In the channel widthdirection 1200, the width of the n-type region 1000 illustrated in FIG.11A(A-1) is sufficiently larger than those in FIGS. 11B(B-1) and11C(C-1). The n-type region 1000 illustrated in FIG. 11B(B-1) is smallerthan the width of the n-type region 1000 in FIG. 11C(C-1).

FIGS. 11A(A-2) to 11C(C-2) illustrate potentials when the transistor isturned on in the structures illustrated in FIGS. 11A(A-1) to 11C(C-1).The positive direction of the potential is defined as a lower direction,and when the transferred electric carriers are electrons, the potentialdecreases in the lower direction.

Referring to FIGS. 11A(A-1) and 11A(A-2), because the n-type region 1000is in contact with the p-type region 1100, the n-type region 1000 isinfluenced by the potential of the p-type region 1100 in the channelwidth direction 1200. FIG. 11A(A-2) illustrates a potential 1250 and acenter 1400 of the bottom of the potential. When it is possible toincrease the width of the n-type region 1000, the distance between thecenter 1400 of the bottom of the potential and the p-type region 1100can be sufficiently provided. Thus, the center 1400 of the bottom of thepotential is not significantly influenced by the potential of the p-typeregion 1200. Therefore, when the transistor is turned on, the potentialat the center of the bottom of the potential is sufficiently low forelectrons (indicated by reference 1300).

On the other hand, as illustrated in FIGS. 11B(B-2) and 11C(C-2), whenthe width of the n region 1000 in the channel width direction is notsufficiently large, the center 1400 of the bottom of the potential isinfluenced by the potential of the p-type region 1200 more than the caseillustrated in FIG. 11A(A-2). Therefore, when the transistor is turnedon, the center 1400 of the bottom of the potential in FIGS. 11B(B-2) and11C(C-2) is not sufficiently low (as indicated by references 1310 and1320).

According to the principle, when the n-type region of the source or thedrain is sufficiently wide in the cross section in the channel widthdirection of the n-type MOS transistor, the center of the bottom of thepotential is sufficiently low for electrons when the transistor isturned on.

Even when it is not possible to sufficiently increase the width of then-type region 1000, the position of the center of the bottom of thepotential may be changed in accordance with the magnitude relationshipof the n-type region 1000. In other words, the center 1400 of the bottomof the potential in FIG. 11C(C-2) with the n-type region 1000 having alarge width is positioned lower than the center 1400 of the bottom ofthe potential in FIG. 11B(B-2).

The pixel structure at line α-α′ in FIG. 1B includes, from the leftside, the element isolation region 17, the p-type region 15, the n-typeregion 30, the n-type region 3, the n-type region 30, and the p-typeregion 15. Comparing the structure in FIG. 1B and the structure in FIG.11B(B-1), the n-type region 1000 in FIG. 11B(B-1) corresponds to then-type region 3 and n-type region 30 in FIG. 1B. The p-type region 1100in FIG. 11B(B-1) corresponds to the p-type region 15 in FIG. 1B.

It may be expressed here that the structure in FIG. 1B has the n-typeregion 3 (first semiconductor region) between the p-type regions 15(third semiconductor regions) in the cross section in the channel widthdirection of the first transfer transistor. It may further be expressedthat the n-type region 30 is placed between the p-type region 15 (thirdsemiconductor region) and the n-type region 3 (first semiconductorregion).

Similarly, in the pixel structure at line β-β′ illustrated in FIG. 1C,the n-type region 1000 in FIG. 11C(C-1) corresponds to the n-type region5 in FIG. 1C. The p-type region 1100 in FIG. 11C(C-1) corresponds to thep-type regions 22 and 26 and p-type region 15 in FIG. 1C. It may beexpressed that the structure in FIG. 1C has the n-type region 5 (secondsemiconductor region) between the p-type regions 15 (third semiconductorregion) on the cross section in the channel width direction of the firsttransfer transistor. It may be expressed that the p-type regions 22 and26 are placed between the p-type region 15 (third semiconductor region)and the n-type region 5 (second semiconductor region).

According to this exemplary embodiment, as described above, the width ofthe n-type region 5 (second semiconductor region) placed between thep-type regions 15 (third semiconductor region) is larger than the widthof the n-type region 3 (first semiconductor region) placed between thep-type regions 15 (third semiconductor region).

For that, when the first transfer transistor is turned on, thephotoelectric conversion portion 2 has a lower potential for theelectrons under the gate of the first transfer transistor than thepotential of the electric-carrier accumulation portion 4. The potentialstructure of the channel of the first transfer transistor is similar toa structure acquired by serially connecting the potentials.

FIGS. 2A to 2D are potential diagrams taken at line II-II in FIG. 1A,and the downward direction of the figures corresponds to the positivedirection of potentials. Referring to FIGS. 2A to 2D, PD indicates thepotential of a portion corresponding to the photoelectric conversionportion 2, MEM indicates the potential of a portion corresponding to theelectric-carrier accumulation portion 4, FD indicates the potential of aportion corresponding to the floating diffusion 6, and OFD indicates thepotential of a portion corresponding to the overflow drain 7.

FIG. 2A is a potential diagram where electric carriers are accumulatedin the photoelectric conversion portion 2 and where the gate 8 of thefirst transfer transistor and the gate 10 of the overflow transistorhave an OFF state. Because the configuration as described above isapplied according to this exemplary embodiment, a region under the gate8 in the photoelectric conversion portion 2 has a lower potential thanthe potential of a region in the electric-carrier accumulation portion4.

FIG. 2B is a potential diagram in which the gate 8 of the first transfertransistor has an ON state. Turning on the gate 8 of the first transfertransistor pushes down the potential under the gate 8 of the firsttransfer transistor so that electric carriers are transferred from thephotoelectric conversion portion 2 to the electric-carrier accumulationportion 4. However, because the potential difference between thephotoelectric conversion portion 2 and the electric-carrier accumulationportion 4 is small, not all of the electric carriers are transferred tothe electric-carrier accumulation portion 4, but many electric carriersare captured by the potential under the gate 8 of the first transfertransistor pushed down by the first transfer transistor. Here, apotential structure is acquired in which the potential of a region inthe photoelectric conversion portion 2 under the gate of the firsttransfer transistor is high while the potential of the electric-carrieraccumulation portion 4 is low. Thus, electric carriers are captured bythe bottom of the potential of the gate 8 of the first transfertransistor.

FIG. 2C is a potential diagram illustrating an intermediate process inwhich the first transfer transistor in FIG. 2B is switched from the ONstate to an OFF state. FIG. 2D is a potential diagram illustrating astate acquired by turning off the gate 8 of the first transfertransistor so that electric carriers are transferred to theelectric-carrier accumulation portion 4. Under the gate of the firsttransfer transistor, a potential structure is acquired in which a rangein the photoelectric conversion portion 2 has a higher potential and thepotential in the electric-carrier accumulation portion 4 is low. Forthat, when the potential of a region closer to the electric-carrieraccumulation portion 4 is higher than that of a region in thephotoelectric conversion portion 2 or when no potential differenceexists between them, the efficiency of the electric carriers transferfrom the photoelectric conversion portion 2 to the electric-carrieraccumulation portion 4 is improved.

Comparing the pixel structure at the line α-α′ in FIG. 1B and the pixelstructure at line β-β′ in FIG. 1C, the width of the active region 1 inthe channel width direction 300 is larger in a region closer to theelectric-carrier accumulation portion 4 than a region closer tophotoelectric conversion portion 2.

Regarding the active region 1 in FIG. 1A, the widths of the p-typeregion 15 under the first transfer transistor are substantially equal inthe photoelectric conversion portion 2 and in the electric-carrieraccumulation portion 4. For that, the width of the active region 1 inthe channel width direction may be used as a proxy variable for thewidth of the n-type region described above.

Therefore, in planer view, a larger width of the active region in theelectric-carrier accumulation portion under the first transfertransistor than the width of the active region in the photoelectricconversion portion can improve the efficiency of the electric carrierstransfer from the photoelectric conversion portion to theelectric-carrier accumulation portion.

Second Exemplary Embodiment

With reference to FIGS. 4A to 4C and FIG. 5, a second exemplaryembodiment will be described. This exemplary embodiment is differentfrom the first exemplary embodiment in that the p-type region 15 is notprovided and that the n-type region 3 is provided on the p-type region22.

FIG. 4A is a plan view of a pixel, and FIGS. 4B and 4C are across-section view taken at line IVB-IVB and a cross-section view takenat line IVC-IVC, respectively, in FIG. 4A. FIG. 5 is a cross-sectionview taken at line V-V in FIG. 4A. Like numbers refer to like parts orregions throughout drawings according to the first and second exemplaryembodiments.

Referring to FIG. 5, the photoelectric conversion portion 2 has thep-type well 22 under and around the n-type region 3, and a lower surfaceof the n-type region 3 is in contact with the p-type well 22.Correspondingly, FIGS. 4B and 4C also illustrate that the p-type well 22and the p-type region 26 under the n-type region 3 and the n-type region5.

The pixel structure illustrated in FIG. 4B taken at line IVB-IVB in FIG.4A has the n-type region 3 as an n-type region and the p-type region 22as a p-type region. The pixel structure illustrated in FIG. 4C taken atline IVC-IVC in FIG. 4A has the n-type region 5 as an n-type region andthe p-type regions 22 and 26 as a p-type region. It may be expressedhere that the structures in FIGS. 4B and 4C have the n-type region 3(first semiconductor region) and the n-type region 5 (secondsemiconductor region) between the p-type regions 22, 26 (thirdsemiconductor region) in the cross section in the channel widthdirection of the first transfer transistor.

According to this exemplary embodiment, in the cross section in thechannel width direction of the first transfer transistor under the firsttransfer transistor, the n-type region 5 (second semiconductor region)in the electric-carrier accumulation portion has a larger width than thewidth of the n-type region 3 (first semiconductor region) in thephotoelectric conversion portion. This can improve the efficiency of theelectric carrier transfer from the photoelectric conversion portion tothe electric-carrier accumulation portion.

In the active region 1 illustrated in FIG. 4A, the widths of the p-typeregion 22 under the first transfer transistor are substantially equal inthe photoelectric conversion portion and in the electric-carrieraccumulation portion. For that, the width of the active region 1 in thechannel width direction 300 can be used as a proxy variable for thewidth of the n-type region 3 and n-type region 5. Therefore, in planerview, a larger width of an active region in the electric carriersaccumulating unit under the first transfer transistor than the width ofan active region in the photoelectric conversion portion can improve theefficiency of the electric carrier transfer from the photoelectricconversion portion to the electric-carrier accumulation portion.

Third Exemplary Embodiment

With reference to FIG. 6, a third exemplary embodiment will bedescribed. This exemplary embodiment is different from the firstexemplary embodiment in that the width of the active region in anelectric-carrier accumulation portion under a second transfer transistorin planer view is larger than the width of the active region in afloating diffusion.

According to this exemplary embodiment, because electrons of electriccarriers are accumulated in the photoelectric conversion portion, areduced width of the n region in the FD 6 can reduce the area of the FD6 and can reduce the capacity of the FD 6. Because a reduced capacity ofthe FD 6 can suppress signal amplification in a peripheral circuit tosome extent, the noise component can also be reduced.

In the electric carriers transfer from the electric-carrier accumulationportion 4 to the FD 6, voltage corresponding to the power supply voltageis normally applied to the FD 6 which thus has a potential largelydifferent from the potential of the electric-carrier accumulationportion 4. Therefore, the problem regarding the efficiency of theelectric carrier transfer which may possibly occur when electriccarriers are transferred from the photoelectric conversion portion 2 tothe electric-carrier accumulation portion 4 may not relatively easilyoccur when electric carriers are transferred from the electric-carrieraccumulation portion 4 to the FD 6. According to this exemplaryembodiment, the relationship between the photoelectric conversionportion 2 and the electric-carrier accumulation portion 4 regarding thewidths of the active region is inverse to the relationship between theelectric-carrier accumulation portion 4 and the FD 6, and the width ofthe active region 1 in the FD is smaller than the width of the activeregion 1 in the electric-carrier accumulation portion.

Fourth Exemplary Embodiment

With reference to FIGS. 7A to 7C, a fourth exemplary embodiment will bedescribed. This exemplary embodiment is different from the firstexemplary embodiment in that the widths of the n-type region 3 and then-type region 5 are equal.

FIG. 7A is a plan view of a pixel, and FIGS. 7B and 7C are cross-sectionviews taken at lines VIIB-VIIB and VIIC-VIIC, respectively, in FIG. 7A.

In the pixel structure at line α-α′ illustrated in FIG. 7B, thephotoelectric conversion portion 2 has the n-type region 3 and n-typeregion 30 as an n-type region and the p-type region 15 as a p-typeregion. In the pixel structure taken at line β-β′ illustrated in FIG.7C, the n-type region includes the n-type region 5 and n-type region 35,and the p-type region is the p-type region 15.

It may be expressed here that, in the structures illustrated in FIGS. 7Band 7C, the n-type region 3 (first semiconductor region) and the n-typeregion 5 (second semiconductor region) are placed between the p-typeregions 15 (third semiconductor regions) in the cross section in thechannel width direction of the first transfer transistor. It may furtherbe expressed that the n-type region 30 (fourth semiconductor region) isplaced between the p-type region 15 (third semiconductor region) and then-type region 3 (first semiconductor region). Furthermore, it may beexpressed that the n-type region 35 (fifth semiconductor region) isplaced between the p-type region 15 (third semiconductor region) and then-type region 5 (second semiconductor region).

According to this exemplary embodiment, the n-type region 3 (firstsemiconductor region) and n-type region 5 (second semiconductor region)in the photoelectric conversion portion have an equal width, but thewidth of the n-type region 35 (fifth semiconductor region) in theelectric-carrier accumulation portion is larger than the width of then-type region 30 (fourth semiconductor region) in the photoelectricconversion portion. Thus, with respect to the total width of the n-typeregion, because the width in the electric-carrier accumulation portionis larger than the width in the photoelectric conversion portion, theefficiency of the electric carrier transfer from the photoelectricconversion portion to the electric-carrier accumulation portion can beimproved.

According to this exemplary embodiment, the widths of the p-type region15 are substantially equal in the photoelectric conversion portion 2 andin the electric-carrier accumulation portion 4 in a cross section in thechannel width direction of the first transfer transistor. Therefore, thewidth of the active region 1 can be used as a proxy variable for thewidth of the n-type region. Therefore, in planer view, a larger width ofan active region in the electric carriers accumulating unit under thegate of the first transfer transistor than the width of an active regionin the photoelectric conversion portion can improve the efficiency ofthe electric carrier transfer from the photoelectric conversion portionto the electric-carrier accumulation portion.

Fifth Exemplary Embodiment

With reference to FIG. 8 and FIGS. 9A to 9D, a fifth exemplaryembodiment will be described. This exemplary embodiment is differentfrom the first exemplary embodiment in that the active region 1 has astepped shape instead of a tapered shape.

FIG. 8 is a plan view of a pixel, and FIGS. 9A to 9D are potentialschematic diagram taken at IX-IX in FIG. 8. The cross section view takenat line IB-IB in FIG. 8 has the same configuration as that in FIG. 1B.The cross section view taken at line IC-IC in FIG. 8 has the sameconfiguration as that in FIG. 1C.

Though the potential gradients illustrated in FIGS. 9A to 9D aredifferent from the potential gradients illustrated in FIGS. 2A to 2Daccording to the first exemplary embodiment, a potential structure isprovided which has a high potential in the photoelectric conversionportion 2 and a low potential in the electric-carrier accumulationportion 4. This can improve the efficiency of the electric carriertransfer from the photoelectric conversion portion to theelectric-carrier accumulation portion.

Sixth Exemplary Embodiment

With reference to FIGS. 10A to 10C, a sixth exemplary embodiment will bedescribed. This exemplary embodiment is different from the firstexemplary embodiment in that a p-type region 18 is further provided foradjusting the channel width at side ends of the photoelectric conversionportion 2. They are further different in that, in planer view, theactive region 1 under the gate of the first transfer transistor haswidths which are equal in the photoelectric conversion portion 2 and inthe electric-carrier accumulation portion 4.

FIG. 10A is a plan view of a pixel, and FIGS. 10B and 10C are crosssections taken at lines XB-XB and XC-XC, respectively, in FIG. 10A.

Referring to FIGS. 10A to 10C, the p-type region 18 different from thep-type region 15 is provided on a side surface of the active region 1 incontact with the element isolation region 17. The pixel structure takenat line α-α′ illustrated in FIG. 10B has the n-type region 3 as ann-type region and the p-type region 18 and p-type region 15 as a p-typeregion. The pixel structure taken at line β-β′ illustrated in FIG. 10Chas the n-type region 5 as an n-type region and the p-type region 15 andp-type region 26 as a p-type region.

It may be expressed here that the n-type region 3 (first semiconductorregion) and the n-type region 5 (second semiconductor region) are placedbetween the p-type regions 15 (third semiconductor regions) in the crosssection in the channel width direction of the first transfer transistorin the structures illustrated in FIGS. 10B and 10C. It may further beexpressed that the n-type region 3 (first semiconductor region) isplaced between the p-type regions 18.

According to this exemplary embodiment, the width of the n-type region 5in the electric-carrier accumulation portion is larger than the width ofthe n-type region 3 in the photoelectric conversion portion in the crosssection in the channel width direction of the first transfer transistorunder the gate of the first transfer transistor. This can improve theefficiency of the electric carrier transfer from the photoelectricconversion portion to the electric-carrier accumulation portion.

Having described the plurality of exemplary embodiments, theconfigurations of the exemplary embodiments may be combined as required.

The region “under the gate of the first transfer transistor” may includea region substantially under the gate of the first transfer transistor.As long as signal electric carriers are transferred from thephotoelectric conversion portion to the electric-carrier accumulationportion when the first transfer transistor has an ON state, asemiconductor region may be placed at a position offset from directlybelow the gate of the first transfer transistor.

Furthermore, the aforementioned exemplary embodiments may be applicableto a camera incorporating a solid-state imaging apparatus, for example.The concept of the camera here includes not only apparatuses usablemainly for imaging but also apparatus auxiliary including an imagingfunction (such as a personal computer and a mobile terminal). Thecameras include a solid-state imaging apparatus according to the presentinvention illustrated as any one of the aforementioned exemplaryembodiments and a processing unit configured to process a signal outputfrom the solid-state imaging apparatus. The processing unit may includean A/D converter, and a processor configured to process digital dataoutput from the A/D converter, for example.

While the present invention has been described with reference toexemplary embodiments, it is to be understood that the invention is notlimited to the disclosed exemplary embodiments. The scope of thefollowing claims is to be accorded the broadest interpretation so as toencompass all such modifications and equivalent structures andfunctions.

This application claims the benefit of Japanese Patent Application No.2014-254581, filed 16 Dec. 2014, which is hereby incorporated byreference herein in its entirety.

What is claimed is:
 1. A solid-state imaging apparatus comprising: aphotoelectric conversion portion, a first transfer transistor configuredto transfer electric carriers from the photoelectric conversion portion,an electric-carrier accumulation portion to which the electric carriersare transferred by the first transfer transistor, a second transfertransistor configured to transfer electric carriers accumulated in theelectric-carrier accumulation portion, a floating diffusion to which theelectric carriers are transferred by the second transfer transistor, anactive region having the photoelectric conversion portion, theelectric-carrier accumulation portion, and the floating diffusion, andan element isolation region defining the active region; wherein, inplanar view, a total length from a first boundary where the elementisolation region contacts the active region to a second boundary wherethe element isolation region contacts the active region in theelectric-carrier accumulation portion side under a gate of the firsttransfer transistor is larger than a total length from a third boundarywhere the element isolation region contacts the active region to afourth boundary where the element isolation region contacts the activeregion in the photoelectric conversion portion side under the gate ofthe first transfer transistor, and wherein, in planar view, a totallength from a fifth boundary where the element isolation region contactsthe active region to a sixth boundary where the element isolation regioncontacts the active region in the electric-carrier accumulation portionside under a gate of the second transfer transistor is larger than atotal length from a seventh boundary where the element isolation regioncontacts the active region to an eighth boundary where the elementisolation region contacts the active region of the active region in thefloating diffusion side under the gate of the second transfertransistor.
 2. The solid-state imaging apparatus according to claim 1,wherein, when the first transfer transistor is turned on, the potentialfor the electric carriers under the gate of first transfer transistor islower in the electric-carrier accumulation portion than that in thephotoelectric conversion portion.
 3. The solid-state imaging apparatusaccording to claim 1, wherein, in planar view, the active region has asemiconductor region of a second conductivity type extending along theboundary between the active region and the element isolation region. 4.The solid-state imaging apparatus according to claim 1, wherein a partof the gate of the first transfer transistor overlaps with a part of theelectric-carrier accumulation portion, and another part of the gate ofthe first transfer transistor overlaps with a part of the photoelectricconversion portion.
 5. The solid-state imaging apparatus according toclaim 1, wherein a part of the gate of the first transfer transistor ispositioned directly over a part of the electric-carrier accumulationportion, and another part of the gate of the first transfer transistoris positioned directly over a part of the photoelectric conversionportion.
 6. The solid-state imaging apparatus according to claim 1,wherein a part of the gate of the first transfer transistor includes anoxidation film.
 7. The solid-state imaging apparatus according to claim1, wherein a part of the gate of the first transfer transistor extendsalong, and parallel to, a part of the electric-carrier accumulationportion, and another part of the gate of the first transfer transistorextends along, and parallel to, a part of the photoelectric conversionportion.
 8. The solid-state imaging apparatus according to claim 1,wherein the gate of the first transfer transistor and the gate of thesecond transfer transistor each include a short axis and a long axis,and wherein the short axis of the gate of the first transfer transistorand the short axis of the gate of the second transfer transistor arearranged to face each other.
 9. The solid-state imaging apparatusaccording to claim 8, wherein the gate of the first transfer transistorand the gate of the second transfer transistor are collinearly arrangedin a direction of the long axes of the gate of the first transfertransistor and the gate of the second transfer transistor.
 10. Thesolid-state imaging apparatus according to claim 8, wherein the elementisolation region is arranged between the short axis of the gate of thefirst transfer transistor and the short axis of the gate of the secondtransfer transistor.
 11. A solid-state imaging apparatus comprising: aphotoelectric conversion portion having a first semiconductor region ofa first conductivity type; a first transfer transistor configured totransfer electric carriers from the photoelectric conversion portion; anelectric-carrier accumulation portion having a second semiconductorregion of a first conductivity type, the electric-carrier accumulatingportion configured to receive the electric carriers transferred by thefirst transfer transistor; a second transfer transistor configured totransfer electric carriers accumulated in the electric-carrieraccumulation portion; a floating diffusion to which the electriccarriers are transferred by the second transfer transistor; an activeregion having the photoelectric conversion portion, the electric-carrieraccumulation portion, and the floating diffusion; and an elementisolation region defining the active region, wherein the firstsemiconductor region and the second semiconductor region are placedbetween third semiconductor regions of a second conductivity type in across section in the channel width direction of the first transfertransistor under a gate of the first transfer transistor, wherein atotal width from a first boundary where the second semiconductor regioncontacts the third semiconductor region to a second boundary where thesecond semiconductor region contacts the third semiconductor region inthe electric-carrier accumulation portion side under the gate of thefirst transfer transistor is larger than a total width from a thirdboundary where the first semiconductor region contacts the thirdsemiconductor region to a fourth boundary where the first semiconductorregion contacts the third semiconductor regions in the photoelectricconversion portion side under the gate of the first transfer transistor,and wherein, in planar view, a total length from a fifth boundary wherethe element isolation region contacts the active region to a sixthboundary where the element isolation region contacts the active regionin the electric-carrier accumulation portion side under a gate of thesecond transfer transistor is larger than a total length from a seventhboundary where the element isolation region contacts the active regionto an eighth boundary where the element isolation region contacts theactive region of the active region in the floating diffusion side underthe gate of the second transfer transistor.
 12. The solid-state imagingapparatus according to claim 11, wherein the photoelectric conversionportion further has a semiconductor region of the second conductivitytype in contact with an upper surface of the first semiconductor region,and a semiconductor region of the first conductivity type in contactwith a lower surface of the first semiconductor region.
 13. Thesolid-state imaging apparatus according to claim 12, wherein the firstconductivity type is an n-type, and the second conductivity type is ap-type.
 14. The solid-state imaging apparatus according to claim 11,wherein the photoelectric conversion portion further has a semiconductorregion of the second conductivity type in contact with an upper surfaceof the first semiconductor region, and a semiconductor region of thesecond conductivity type in contact with a lower surface of the firstsemiconductor region.
 15. The solid-state imaging apparatus according toclaim 11, wherein the electric-carrier accumulation portion further hasa semiconductor region of the second conductivity type in contact withan upper surface of the second semiconductor region and a semiconductorregion of the second conductivity type in contact with a lower surfaceof the second semiconductor region.
 16. The solid-state imagingapparatus according to claim 11, wherein, in planar view, the activeregion has a semiconductor region of the second conductivity typeextending from the photoelectric conversion portion to theelectric-carrier accumulation portion.
 17. The solid-state imagingapparatus according to claim 16, wherein the second semiconductor regionin a cross section in the channel width direction of the first transfertransistor under the gate of the first transfer transistor is placedbetween a semiconductor region of the second conductivity type differentfrom the third semiconductor regions.
 18. The solid-state imagingapparatus according to claim 11, wherein the gate of the first transfertransistor and the gate of the second transfer transistor each include ashort axis and a long axis, and wherein the short axis of the gate ofthe first transfer transistor and the short axis of the gate of thesecond transfer transistor are arranged to face each other.
 19. Thesolid-state imaging apparatus according to claim 18, wherein the gate ofthe first transfer transistor and the gate of the second transfertransistor are collinearly arranged in a direction of the long axes ofthe gate of the first transfer transistor and the gate of the secondtransfer transistor.
 20. The solid-state imaging apparatus according toclaim 18, wherein the element isolation region is arranged between theshort axis of the gate of the first transfer transistor and the shortaxis of the gate of the second transfer transistor.
 21. A solid-stateimaging apparatus comprising: a photoelectric conversion portion havinga first semiconductor region of a first conductivity type; a firsttransfer transistor configured to transfer electric carriers from thephotoelectric conversion portion; an electric-carrier accumulationportion having a second semiconductor region of a first conductivitytype, the electric-carrier accumulating portion receiving the electriccarriers transferred by the first transfer transistor; a second transfertransistor configured to transfer electric carriers accumulated in theelectric-carrier accumulation portion; a floating diffusion to which theelectric carriers are transferred by the second transfer transistor; anactive region having the photoelectric conversion portion, theelectric-carrier accumulation portion, and the floating diffusion; andan element isolation region having an insulator defining the activeregion, wherein the first semiconductor region and the secondsemiconductor region in a cross section in the channel width directionof the first transfer transistor under the first transfer transistor isplaced between a third semiconductor region of a second conductivitytype, and a fourth semiconductor region of the first conductivity typeis placed between the first semiconductor region and the thirdsemiconductor region, a fifth semiconductor region of the firstconductivity type is placed between the second semiconductor region andthe third semiconductor region, and a total width of the secondsemiconductor region and the fifth semiconductor region is larger than atotal width of the first semiconductor region and the fourthsemiconductor region.
 22. The solid-state imaging apparatus according toclaim 21, wherein, in planar view, the width of the active region in theelectric-carrier accumulation portion under the second transfertransistor is larger than the width of the active region in the floatingdiffusion under the second transfer transistor.